For better understanding of the material removal mechanisms at the atomic level in chemical mechanical polishing(CMP) process of cubic silicon carbide(SiC),molecular dynamics(MD) method was employed to establish an atomic model of SiC scratching by diamond abrasive. The effects of abrasive size,scratching depths and scratching velocities on the scratched surface profile,crystal structure,friction force and the atomic removal rate of silicon carbide were investigated by MD simulations. The simulation results...
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