节点文献
高效本征薄层异质结(HIT)太阳电池技术研究进展
A Technological Review of the Highly Efficient Heterojunction with Intrinsic Thin-layer(HIT)Solar Cells
【摘要】 高效本征薄层异质结(HIT)是由本征钝化层沉积在a-Si/c-Si界面处组成,这种硅异质结(SHJ)结构由于钝化性能好,实际效率值往往比同质结电池更高。本文首先介绍了HIT高效电池发展现状、电池基本结构的特点,然后从制备工艺、钝化原理、能带带阶等几个方面对衬底层、非晶硅层(本征/掺杂)、TCO薄膜以及金属格栅电极展开讨论,并对未来高效HIT电池的工业化发展趋势做了展望。
【Abstract】 Heterojunction with intrinsic thin-layer(HIT)consist of thin amorphous silicon layers deposited on crystalline silicon wafers,which forms a silicon heterojunction(SHJ)structure with the major advantages of full exploitation of the excellent passivation properties of a-Si∶H films,and consequently,the energy conversion efficiencies higher than homogenous cells.The paper provides an introduction on the development and the structure of the HIT solar cells,and a discussion upon the wafer layers,the a-Si(undoped/doped)layers,the TCO(transparent conducting oxides)films and the metal grid electrodes from the perspectives of fabrication processes,the principle of passivation,and the band gap.Finally aprospect on the future trends are also proposed.
【Key words】 band gap; passivation; carrier mobility; heterojunction with intrinsic thin-layer(HIT); solar cell;
- 【文献出处】 材料导报 ,Materials Review , 编辑部邮箱 ,2018年05期
- 【分类号】TM914.4
- 【被引频次】5
- 【下载频次】785