研制了一种基于微机电系统(MEMS)技术的压阻式绝缘体上硅(SOI)高温压力传感器芯片。压力敏感电阻器与衬底之间采用二氧化硅介质隔离,解决了传统的PN结隔离方式在高温条件下的漏电失效问题。研制的高温压力芯片压力量程为0~2 MPa,室温1 m A条件下满量程输出信号达到100 m V以上,非线性小于0.15%FS,压力迟滞小于0.05%FS。在-55~+150℃温度范围内,零点温度系数小于20μV/℃,灵敏度温度系数小于0.02%FS/℃,零点温度迟滞小于0.1%FS。将芯片样本在150℃环境下进行了短期零点时漂测试验证其稳定性,结果优于0.05%FS。
【英文摘要】
A silicon on insulator(SOI) high temperature piezoresistive pressure sensor chip is researched and fabricated based on micro-electro-mechanical system(MEMS) technology. The pressure sensitive resistors are isolated by Si O2 from the silicon substrate to solve current leakage problem of the traditional PN junction isolated type in high temperature.The pressure range of the developed high temperature pressure sensor chip is 0 ~ 2 MPa,the full scale output is more than 100 m V with 1 m A at room temperature,th...
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