【摘要】 采用高温固相反应法制备了Si⁴⁺、Ge⁴⁺和Sn⁴⁺离子掺杂的LiGa₅O₈∶Cr³⁺长余辉材料,系统研究了掺杂对LiGa₅O₈∶Cr³⁺光致发光和长余辉性能的影响。实验结果表明,所制备的系列材料能产生650⁸00nm的近红外余辉发射,主发射峰位于717nm,来源于Cr³⁺离子的2E→4A2特征跃迁,与未进行掺杂的样品相比,掺杂Si 4+、Ge⁴⁺和Sn⁴⁺离子的LiGa₅O₈∶Cr³⁺余辉发光强度均得到增强,余辉性能显著改善。热释光测试结果表明,Si 4+、Ge⁴⁺和Sn⁴⁺离子掺入主要提高了LiGa₅O₈∶Cr³⁺的陷阱浓度,且使得有效陷阱的数量增加,从而改善了LiGa₅O₈∶Cr³⁺的余辉性能。更多还原

【Abstract】 A series of LiGa₅O₈ ∶Cr³⁺,M4+（M = Si,Ge,Sn）near-infrared persistent phosphors were successfully prepared by solid state reaction method.The influence of doping Si 4+, Ge⁴⁺, or Sn⁴⁺ions on photoluminescence, long persistent luminescence and thermoluminescence properties was systematically investigated.The results indicate that these phosphors exhibit persistent luminescence in the 650⁸00 nm wavelength range dominated at717 nm originated from the characteristic 2 E→4 A2 transition of Cr³⁺ions,and the persistent luminescence performance of phosphors was significantly enhanced after the incorporation of Si 4+,Ge⁴⁺,or Sn⁴⁺ions.Thermoluminescence spectra indicate that the incorporation of Si4+,Ge⁴⁺,or Sn⁴⁺ions contributes to the formation defects and increases the number of traps,thus improving the persistent luminescence properties of phosphors.更多还原