Zinc oxide film is a semiconductor material widely used in the field of microelectronics,and its thermal conductivity has an important influence on the performance of microelectronic devices.The non-equilibrium( NEMD) molecular dynamics method and the optimized Buckingham potential function were used to numerically simulate the thermal conductivity of wurtzite zinc oxide nanofilm.The simulation results show that the thermal conductivity of the zinc oxide film with a thickness ranging from 29.15 to 45.81 nm ...