【摘要】 在阳极氧化法制备有序TiO₂纳米管阵列（TiO₂ NTAs）的基础上,通过气氛保护退火实现碳改性处理（C-TiO₂NTAs）,并进一步采用水浴沉积工艺可控制备VO₂/C-TiO₂纳米管复合阵列（VO₂/C-TiO₂ NTAs）。采用X射线衍射（XRD）、X射线光电子能谱（XPS）、场发射扫描电镜（FESEM）和场发射透射电镜（TEM）对VO₂/C-TiO₂ NTAs的物相、成分和形貌进行表征,利用循环伏安（CV）、恒电流充放电（GCD）以及电化学阻抗谱（EIS）测试VO₂/C-TiO₂ NTAs的超电容性能。结果表明:在浓度为0.01 mol/L的VOSO4溶液中90℃沉积3 h,VO₂/C-TiO₂ NTAs的比电容最佳,当电流密度为1 A/g、比电容为316 F/g,且经过1000次恒电流循环充放电后,其电容保持率为82%。更多还原

【Abstract】 On the basis of ordered TiO₂ nanotube arrays（TiO₂ NTAs） prepared by an electrochemical anodization process,the C modified TiO₂ nanotube arrays（C-TiO₂ NTAs） were fabricated by annealing in protective atmosphere and VO₂/C-TiO₂ nanotube composite arrays（VO₂/C-TiO₂ NTAs） were obtained via water bath deposition process.The phase,composition and morphology of VO₂/C-TiO₂ NTAs were characterized by X-ray diffractometry（XRD）,X-ray photoelectron spectroscopy（XPS）,field emission scanning electron microscopy（FESEM）,and transmission electron microscopy（TEM）.And the supercapacitive performances of VO₂/C-TiO₂ NTAs were investigated by the cyclic voltammetry（CV）,galvanostatic charge discharge tests（GCD） and electrochemical impedance spectroscopy（EIS）.The results indicate that VO₂/C-TiO₂ NTAs obtained under 90 ℃ with the deposition time of 3 h in 0.01 mol/L VOSO4 solution exhibits the best performance,the specific capacitance reaches 316 F/g at current density of 1 A/g,and the initial capacitance of 82% can also be maintained after 1000 galvanostatic charge discharge cycles.更多还原