【摘要】 基于碳化硅半导体的高压电力电子器件如MOSFET、IGBT等有望用于智能电网系统中。这些器件的基本结构包含PN结及其变体,其特点是包括N-漂移层、P阱区及位于其中的N+和P+并列阱区,形成了P+(N+)/P/N-结构。一般采用高温高能离子注入的方式制备此结构,具有较高的难度。本文采用外延生长的方法实现P+/P/N-同质多层结构,以P型阶梯掺杂的方式实现了一种4H-SiC多层薄膜同质外延材料。与注入方法相比,本方法在阱区几何尺寸、掺杂精度上具有优势,可望用于今后制备性能更优的同类高压器件。更多还原

【Abstract】 High-voltage power electronics based on silicon carbide semiconductors such as MOSFET and IGBT are expected to be used in smart grid systems.The basic structure of these devices includes the pn junction and its variants,in which N-drift layer,P-well region are included,together with N+ and P+ parallel wells,forming P+(N+)/P/N- homogeneous multilayer structure.Generally,high temperature and high energy ion implantation is used to prepare this structure,which has been somehow with difficulty.In this paper,P+/P/N- homogeneous multilayer structure is realized by epitaxial growth method,and a 4H-SiC multilayered homoepitaxial film is realized by p-type stepped doping.Compared with the implantation method,this method has advantages in the geometric size and doping precision of the well regions,and it is expected to be used in similar high voltage devices with better performance in the future.更多还原