【摘要】 采用脉冲激光沉积镀膜技术在Si（100）衬底上生长了La₂Ti₂O₇栅介质薄膜.通过X射线衍射、原子力显微及同步辐射红外透射光谱技术探索了不同温度下的后退火处理对薄膜结构及介电性能产生的影响.结果表明,未经退火处理的La₂Ti₂O₇薄膜为非晶态,退火后薄膜结晶形成单斜结构.红外谱表明退火处理能够显著增加薄膜介电常数.沉积的非晶态薄膜具有较低的介电常数是因为损失了一些声子振动模式,尤其在低波数段损失的更加明显.实验结果说明后退火处理对La₂Ti₂O₇薄膜的介电性能有非常重要的影响.更多还原

【Abstract】 La₂Ti₂O₇ thin films were grown on Si（100）substrates by using pulsed laser deposition method.The effect of post-annealing on the structural and dielectric properties of the films at different temperatures was studied by using X-ray diffraction,atomic force microscopy and synchrotron infrared transmission spectroscopy.The results show that the as-deposited thin film is amorphous and annealing thin film is crystallized into monoclinic structure.The infrared spectrum reveals that the annealing can significantly increase the dielectric constant.The as-deposited thin film has a low dielectric constant attributed to the loss of some phonon modes,especially the low frequency mode.This indicates post-annealing has an important influence on the dielectric property of La₂Ti₂O₇ thin film.更多还原