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弹载速调管存储寿命技术研究

Research on Storage Life of Missile-Borne Klystrons

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【作者】 周军欧阳佳佳王坤杨继涛

【Author】 ZHOU Jun;OUYANG Jia-jia;WANG Kun;YANG Ji-tao;Beijing Vacuum Electronic Research Institute;

【机构】 北京真空电子技术研究所

【摘要】 本文针对弹载速调管的长寿命存储技术开展了科学研究,通过理论分析及试验验证,查明了速调管存储失效的原因,并进行了技术改进,改进后的试验结果表明改进措施切实有效。本文提出了一种新型的适用于弹载速调管的真空度的检测方法,并据此制订了弹载速调管的存储筛选试验方案。最终验证采用此研究成果制备的弹载速调管其储存寿命可以达到12年。

【Abstract】 This paper describes the research on long storage life of missile-borne klystrons.Through theoretical analysis and experimental verification,the failure cause of the klystron storage was identified.Some technical improvements were carried out and the measures were verified effective.A new method for measuring the vacuum degree of the missile borne klystron was presented.Based on the measuring method,storage and screen schemes of missile-borne klystrons are worked out.It is finally verified that the storage life of klystrons can reach 12 years by these schemes.

【关键词】 速调管真空度存储
【Key words】 KlystronVacuum degreeStorage
  • 【文献出处】 真空电子技术 ,Vacuum Electronics , 编辑部邮箱 ,2017年01期
  • 【分类号】TN122;TN830
  • 【被引频次】1
  • 【下载频次】34
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