【摘要】 设计了硅光辅助电化学腐蚀光谱响应曲线的测量实验,计算了在氢氟酸溶液中n型硅的光谱响应特性曲线,发现随着波长的增加,光谱响应度明显增加.选择卤素灯和LED(850nm)作为光源,测量了n型硅光辅助电化学腐蚀I-V曲线,结果证明,光随着波长的增加在硅中的穿透深度也增加是导致光谱响应度和波长成正比的根本原因.更多还原

【Abstract】 The spectral response characteristics of photo-electrochemical etching(PEC)of macroporous Si were researched,and the measurement experiments were designed.The spectral response curves of n-type silicon wafer was presented in aqueous HF.The halogen lamp and a center wavelength of 850 nm LED array were used as the light source,then the current-voltage curves of photo-electrochemical etching of silicon were measured in aqueous HF using back-side illumination.The experimental results were analyzed theoretically in detail.更多还原