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The residual C concentration control for low temperature growth p-type GaN

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【作者】刘双韬；赵德刚；杨静；江德生；梁锋；陈平；朱建军；刘宗顺；李翔；刘炜；邢瑶；张立群；

【Author】 Shuang-Tao Liu;De-Gang Zhao;Jing Yang;De-Sheng Jiang;Feng Liang;Ping Chen;Jian-Jun Zhu;Zong-Shun Liu;Xiang Li;Wei Liu;Yao Xing;Li-Qun Zhang;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences;School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences;Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences;

【机构】 State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences； School of Electronic Electrical and Communication Engineering University of Chinese Academy of Sciences； Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences；

【摘要】 In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied.Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration:（i） the C concentration decreases with the increase of growth pressure;（ii） we have found there exists a Ga memory effect when changing the Cp₂ Mg flow which will lead the growth rate and C concentration increase along the increase of Cp₂ Mg flow;（iii） annealing outside of metal–organic chemical vapor deposition（MOCVD） could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration.更多还原

【Abstract】 In this work, the influence of C concentration to the performance of low temperature growth p-GaN is studied.Through analyses, we have confirmed that the C impurity has a compensation effect to p-GaN. At the same time we have found that several growth and annealing parameters have influences on the residual C concentration:（i） the C concentration decreases with the increase of growth pressure;（ii） we have found there exists a Ga memory effect when changing the Cp₂ Mg flow which will lead the growth rate and C concentration increase along the increase of Cp₂ Mg flow;（iii） annealing outside of metal–organic chemical vapor deposition（MOCVD） could decrease the C concentration while in situ annealing in MOCVD has an immobilization role to C concentration.更多还原

【关键词】 nitride materials； p-GaN； C concentration；
【Key words】 nitride materials； p-GaN； C concentration；

【基金】 supported by the National Key Research and Development Program of China(Grant Nos.2016YFB0401801 and 2016YFB0400803);the National Natural Science Foundation of China(Grant Nos.61674138,61674139,61604145,61574135,61574134,61474142,61474110,61377020,and 61376089);the Science Challenge Project(Grant No.JCKY2016212A503);Beijing Municipal Science and Technology Project(Grant No.Z161100002116037)

【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2017年10期

【分类号】TN304
【下载频次】22

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