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Enhancing redshift phenomenon in time-resolved photoluminescence spectra of AlGaN epilayer

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【Author】 Wei Li;Peng Jin;Wei-Ying Wang;De-Feng Mao;Xu Pan;Xiao-Liang Wang;Zhan-Guo Wang;Science and Technology on Metrology and Calibration Laboratory, Changcheng Institute of Metrology & Measurement,Aviation Industry Corporation of China;Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences, Chinese Academy of Sciences;

【机构】 Science and Technology on Metrology and Calibration Laboratory, Changcheng Institute of Metrology & Measurement,Aviation Industry Corporation of China； Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, College of Materials Science and Opto-Electronic Technology,University of Chinese Academy of Sciences, Chinese Academy of Sciences；

【摘要】 AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence(PL)and time-resolved photoluminescence(TRPL). An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed, and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K. We demonstrated that these behaviors are caused by a change in the carrier dynamics with increasing temperature due to the competition of carriers’ localization and delocalization in the AlGaN alloy.更多还原

【Abstract】 AlGaN epitaxial layer has been studied by means of temperature-dependent time-integrated photoluminescence(PL)and time-resolved photoluminescence(TRPL). An enhancing redshift phenomenon in TRPL spectra with increasing temperature was observed, and the localized excitons behaved like quasi two-dimensional excitons between 6 K and 90 K. We demonstrated that these behaviors are caused by a change in the carrier dynamics with increasing temperature due to the competition of carriers’ localization and delocalization in the AlGaN alloy.更多还原

【关键词】 AlGaN； time-resolved photoluminescence； localized excitons；
【Key words】 AlGaN； time-resolved photoluminescence； localized excitons；

【基金】 Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0400101);Beijing Science and Technology Project,China(Grant No.Z151100003315024)

【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2017年07期

【分类号】O482.31
【下载频次】24

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