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An improved design for Al Ga N solar-blind avalanche photodiodes with enhanced avalanche ionization

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【Author】 Yin Tang;Qing Cai;Lian-Hong Yang;Ke-Xiu Dong;Dun-Jun Chen;Hai Lu;Rong Zhang;You-Dou Zheng;Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering,Nanjing University;Department of Physics, Changji College;School of Mechanical and Electronic Engineering, Chuzhou University;

【机构】 Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering,Nanjing University； Department of Physics, Changji College； School of Mechanical and Electronic Engineering, Chuzhou University；

【摘要】 To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solarblind avalanche photodiode（APD） by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al_0.3Ga_0.7N/Al_0.45Ga_0.55N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al_0.3Ga_0.7N which has about a six times higher hole ionization coefficient than the high-Al-content Al_0.45Ga_0.55N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device.更多还原

【Abstract】 To enhance the avalanche ionization, we designed a new separate absorption and multiplication AlGaN solarblind avalanche photodiode（APD） by using a high/low-Al-content AlGaN heterostructure as the multiplication region instead of the conventional AlGaN homogeneous layer. The calculated results show that the designed APD with Al_0.3Ga_0.7N/Al_0.45Ga_0.55N heterostructure multiplication region exhibits a 60% higher gain than the conventional APD and a smaller avalanche breakdown voltage due to the use of the low-Al-content Al_0.3Ga_0.7N which has about a six times higher hole ionization coefficient than the high-Al-content Al_0.45Ga_0.55N. Meanwhile, the designed APD still remains a good solar-blind characteristic by introducing a quarter-wave AlGaN/AlN distributed Bragg reflectors structure at the bottom of the device.更多还原

【关键词】 AlGaN； deep ultraviolet； photoelectric detector； distributed Bragg reflector；
【Key words】 AlGaN； deep ultraviolet； photoelectric detector； distributed Bragg reflector；

【基金】 Project supported by the State Key Project of Research and Development Plan,China(Grant No.2016YFB0400903);the National Natural Science Foundation of China(Grant Nos.61634002,61274075,and 61474060);the Key Project of Jiangsu Province,China(Grant No.BE2016174);the Anhui University Natural Science Research Project,China(Grant No.KJ2015A153);the Open Fund(KFS)of State Key Lab of Optical Technologieson Nanofabrication and Microengineering,Institute of Optics and Electronics,Chinese Academy of Science

【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2017年03期

【分类号】TN312.7
【被引频次】1
【下载频次】34

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