节点文献

65nm三阱CMOS静态随机存储器多位翻转实验研究

Experimental Research of Multiple Cell Upsets in 65nm Triple-well CMOS Static Random Access Memory

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 李丽丽郭刚蔡莉池雅庆刘建成史淑廷惠宁韩金华

【Author】 LI Li-li;GUO Gang;CAI Li;CHI Ya-qing;LIU Jian-cheng;SHI Shu-ting;HUI Ning;HAN Jin-hua;China Institute of Atomic Energy;National University of Defense Technology;

【机构】 中国原子能科学研究院核物理研究所国防科学技术大学

【摘要】 利用4种不同线性能量转换值的重离子对一款65nm三阱CMOS静态随机存储器(SRAM)进行重离子垂直辐照实验,将多位翻转图形、位置和事件数与器件结构布局结合对器件单粒子翻转截面、单粒子事件截面及多位翻转机理进行深入分析。结果表明,单粒子事件截面大于单个存储单元内敏感结点面积,单粒子翻转截面远大于单个存储单元面积。多位翻转事件数和规模的显著增长导致单粒子翻转截面远大于单粒子事件截面,多位翻转成为SRAM单粒子翻转的主要来源。结合器件垂直阱隔离布局及横向寄生双极晶体管位置,分析得到多位翻转主要由PMOS和NMOS晶体管的双极效应引起,且NMOS晶体管的双极效应是器件发生多位翻转的主要原因。

【Abstract】 The irradiation tests were performed in a 65 nm triple-well CMOS static random access memory( SRAM) in normal incident angle by using four kinds of heavy ions with different linear energy transfer( LET) values. The single event upset( SEU) cross sections in upsets and in events and the main physical mechanisms of multiple cell upsets( MCUs) were investigated by combining MCUs pattern,position,and counts with the memory cell array layout. The results show that the SEU cross section in events is larger than the area of sensitive nodes in a memory cell while the SEU cross section in upsets is much larger than the area of a cell. The SEU cross section in upsets is larger than SEU cross section in events because of the significant increase in MCUs amount and order,and MCUs become the main source of SEU in SRAM.Moreover,considering of the vertical well isolation layout and the position of parasitic lateral bipolar transistors,most MCUs are induced by parasitic bipolar effect of PMOS and NMOS,of which the parasitic bipolar effect of NMOS is the main cause of MCUs.

【基金】 国家自然科学基金资助项目(11475272)
  • 【文献出处】 原子能科学技术 ,Atomic Energy Science and Technology , 编辑部邮箱 ,2017年05期
  • 【分类号】TP333
  • 【下载频次】62
节点文献中: 

本文链接的文献网络图示:

本文的引文网络