【摘要】 采用简便的溶剂热法制备垂直取向的氧化铜（CuO）纳米片阵列膜,然后将氧化石墨烯（GO）溶胶旋涂于CuO薄膜表面,形成由CuO纳米片顶端支撑的GO/CuO纳米复合结构.场发射实验结果显示,与纯的CuO纳米片相比,GO/CuO纳米复合结构的开启电场从2.4V·μm^-1降至1.7V·μm^-1,电流密度增大,发射稳定性也明显提高.实验结果表明,样品场发射性能的显著增强应源于CuO纳米片的垂直取向、超薄的刃状边缘以及GO的褶皱和凸起协同形成更多有效的场发射位点.该纳米复合结构制备方法简便,高效经济,在场发射高亮电子源以及其它真空纳米电子器件中具有潜在的应用价值.更多还原

【Abstract】 Vertically aligned CuO nanosheets were prepared via a simple solvo-thermal on Cu substrate at low temperature,then,spin-coated with graphene oxide（GO）on the top of the CuO nanosheets to form a supported structure of GO/CuO.Compared with the bare CuO nanosheets,this new structure shows excellent field emission properties,such as,the turn-on electric field decrease from 2.4V·μm^-1 to 1.7V·μm^-1,the current density is increased and the emission stability is improved as well.Analysis results show that,such significant improvement can be attributed to the vertical orientation and the ultra-thin edge of the CuO nanosheets,the wrinkles and sharp protrusions of the GO,which can synergistically to form a great deal of the effective emission sites.The preparation method is very simple,efficient and economical,and has potential application value in highlight electron source as well as in vacuum nanoelectronic devices of field emission.更多还原