Influence of γ-ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor
The carrier microscopic transport process of uniaxial strained Si n-channel metal-oxide-semiconduct or field-effect transistor(NMOSFET) is analyzed under γ-ray radiation.The model of radiation-induced defect densities that are quantitative representations of trapped charges integrated across the thickness of the oxide(N_(ot)),and the number of interface traps at the semiconductor/oxide interface(N_(it)),is established.The variations of electrical characteristics of the uniaxial strained Si nanometer NMOSFET...
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