节点文献
Electronic,Elastic and Piezoelectric Properties of Two-Dimensional Group-Ⅳ Buckled Monolayers
【摘要】 Electronic, elastic and piezoelectric properties of two-dimensional(2 D) group-IV buckled monolayers(GeSi, SnSi and SnGe) are studied by first principle calculations. According to our calculations, SnSi and SnGe are good 2 D piezoelectric materials with large piezoelectric coefficients. The values of d11 of SnSi and SnGe are 5.04 pm/V and 5.42 pm/V, respectively, which are much larger than 2 D MoS2(3.6 pm/V) and are comparable with some frequently used bulk materials(e.g., wurtzite AIN 5.1 pm/V). Charge transfer is calculated by the Lowdin analysis and we find that the piezoelectric coefficients(d11 and d31) are highly dependent on the polarizabilities of the anions and cations in group-IV monolayers.
【Abstract】 Electronic, elastic and piezoelectric properties of two-dimensional(2 D) group-IV buckled monolayers(GeSi, SnSi and SnGe) are studied by first principle calculations. According to our calculations, SnSi and SnGe are good 2 D piezoelectric materials with large piezoelectric coefficients. The values of d11 of SnSi and SnGe are 5.04 pm/V and 5.42 pm/V, respectively, which are much larger than 2 D MoS2(3.6 pm/V) and are comparable with some frequently used bulk materials(e.g., wurtzite AIN 5.1 pm/V). Charge transfer is calculated by the Lowdin analysis and we find that the piezoelectric coefficients(d11 and d31) are highly dependent on the polarizabilities of the anions and cations in group-IV monolayers.
- 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2017年08期
- 【分类号】O469
- 【被引频次】2
- 【下载频次】9