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Electronic,Elastic and Piezoelectric Properties of Two-Dimensional Group-Ⅳ Buckled Monolayers

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【作者】 石鲸高勇王晓莉云斯宁

【Author】 Jing Shi;Yong Gao;Xiao-Li Wang;Si-Ning Yun;MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter,Xi’an Jiaotong University;Functional Materials Laboratory, School of Materials and Mineral Resources,Xi’an University of Architecture and Technology;

【机构】 MOE Key Laboratory for Non-equilibrium Synthesis and Modulation of Condensed Matter,Xi’an Jiaotong UniversityFunctional Materials Laboratory, School of Materials and Mineral Resources,Xi’an University of Architecture and Technology

【摘要】 Electronic, elastic and piezoelectric properties of two-dimensional(2 D) group-IV buckled monolayers(GeSi, SnSi and SnGe) are studied by first principle calculations. According to our calculations, SnSi and SnGe are good 2 D piezoelectric materials with large piezoelectric coefficients. The values of d11 of SnSi and SnGe are 5.04 pm/V and 5.42 pm/V, respectively, which are much larger than 2 D MoS2(3.6 pm/V) and are comparable with some frequently used bulk materials(e.g., wurtzite AIN 5.1 pm/V). Charge transfer is calculated by the Lowdin analysis and we find that the piezoelectric coefficients(d11 and d31) are highly dependent on the polarizabilities of the anions and cations in group-IV monolayers.

【Abstract】 Electronic, elastic and piezoelectric properties of two-dimensional(2 D) group-IV buckled monolayers(GeSi, SnSi and SnGe) are studied by first principle calculations. According to our calculations, SnSi and SnGe are good 2 D piezoelectric materials with large piezoelectric coefficients. The values of d11 of SnSi and SnGe are 5.04 pm/V and 5.42 pm/V, respectively, which are much larger than 2 D MoS2(3.6 pm/V) and are comparable with some frequently used bulk materials(e.g., wurtzite AIN 5.1 pm/V). Charge transfer is calculated by the Lowdin analysis and we find that the piezoelectric coefficients(d11 and d31) are highly dependent on the polarizabilities of the anions and cations in group-IV monolayers.

【基金】 Supported by the National Natural Science Foundation of China under Grant No 51672208;the National Science and Technology Pillar Program during the Twelfth Five-Year Plan Period under Grant No 2012BAD47B02;the Sci-Tech Research and Development Program of Shaanxi Province under Grant Nos 2010K01-120,2011JM6010 and 2015JM5183;the Shaanxi Provincial Department of Education under Grant No 2013JK0927;the SRF for ROCS of SEM
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2017年08期
  • 【分类号】O469
  • 【被引频次】2
  • 【下载频次】9
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