Recrystallization Phase in He-Implanted 6H-SiC

【摘要】 The evolution of the recrystallization phase in amorphous 6 H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of recrystallized layers in 15 keV He~+ ion implanted 6 H-SiC(0001)wafers are characterized by means of cross-sectional transmission electron microscopy(XTEM) and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900℃. The recrystallization region contains a 3 C-SiC structure and a 6 H-SiC structure with different crystalline orientations.A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles.With increasing annealing to 1000℃, 3 C-SiC and columnar epitaxial growth 6 H-SiC become unstable, instead of[0001] orientated 6 H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing.The possible mechanisms for explanation are also discussed.更多还原

【Abstract】 The evolution of the recrystallization phase in amorphous 6 H-SiC formed by He implantation followed by thermal annealing is investigated. Microstructures of recrystallized layers in 15 keV He~+ ion implanted 6 H-SiC(0001)wafers are characterized by means of cross-sectional transmission electron microscopy(XTEM) and high-resolution TEM. Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900℃. The recrystallization region contains a 3 C-SiC structure and a 6 H-SiC structure with different crystalline orientations.A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles.With increasing annealing to 1000℃, 3 C-SiC and columnar epitaxial growth 6 H-SiC become unstable, instead of[0001] orientated 6 H-SiC. In addition, the density of lattice defects increases slightly with increasing annealing.The possible mechanisms for explanation are also discussed.更多还原