The Nonlinear Electronic Transport in Multilayer Graphene on Silicon-on-Insulator Substrates

【摘要】 We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma（ICP）. By fabricating a multilayer-graphene field-effect transistor on a Si/SiO₂ substrate, we obtain that the superlinearity results from the interaction between the multilayer graphene sheet and the ICP-etched silicon. In addition, the observed superlinear transport of the device is found to be consistent with the prediction of Schwinger’s mechanism. In the high bias regime, the values of a increase dramatically from 1.02 to 1.40. The strength of the electric field corresponding to the on-start of electron-hole pair production is calculated to be 5 × 10⁴ V/m. Our work provides an experimental observation of the nonlinear transport of the multilayer graphene.更多还原

【Abstract】 We conduct a study on the superlinear transport of multilayer graphene channels that partially or completely locate on silicon which is pre-etched by inductively coupled plasma（ICP）. By fabricating a multilayer-graphene field-effect transistor on a Si/SiO₂ substrate, we obtain that the superlinearity results from the interaction between the multilayer graphene sheet and the ICP-etched silicon. In addition, the observed superlinear transport of the device is found to be consistent with the prediction of Schwinger’s mechanism. In the high bias regime, the values of a increase dramatically from 1.02 to 1.40. The strength of the electric field corresponding to the on-start of electron-hole pair production is calculated to be 5 × 10⁴ V/m. Our work provides an experimental observation of the nonlinear transport of the multilayer graphene.更多还原