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The 18.3% Silicon Solar Cells with Nano-Structured Surface and Rear Emitter

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【作者】 张军娜汪雷戴准唐勋刘友博杨德仁

【Author】 Jun-Na Zhang;Lei Wang;Zhun Dai;Xun Tang;You-Bo Liu;De-Ren Yang;State Key Laboratory of Silicon Materials and School of Materials Science and Engineering,Zhejiang University;

【机构】 State Key Laboratory of Silicon Materials and School of Materials Science and Engineering,Zhejiang University

【摘要】 A nano-structured surface is formed on the pyramid structure of n-type silicon solar cells by size-controlled silver nano-particle assisted etching. Such a nano-structure creates a front average weighted reflectance of less than 2.5%in the 300-1200 nm range due to the broadband reflection suppression. The sodium hydroxide is used to obtain the low-area surface by post-etching the nano-structure, thus the severe carrier recombination associated with the nano-structured surface could be reduced. After emitter forming, screen printing and firing by means of the industrial fabrication protocol, an 18.3%-efficient nano-structured silicon solar cell with rear emitter is fabricated.The process of fabricating the solar cells matches well with industrial manufacture and shows promising prospects.

【Abstract】 A nano-structured surface is formed on the pyramid structure of n-type silicon solar cells by size-controlled silver nano-particle assisted etching. Such a nano-structure creates a front average weighted reflectance of less than 2.5%in the 300-1200 nm range due to the broadband reflection suppression. The sodium hydroxide is used to obtain the low-area surface by post-etching the nano-structure, thus the severe carrier recombination associated with the nano-structured surface could be reduced. After emitter forming, screen printing and firing by means of the industrial fabrication protocol, an 18.3%-efficient nano-structured silicon solar cell with rear emitter is fabricated.The process of fabricating the solar cells matches well with industrial manufacture and shows promising prospects.

【基金】 Supported by the National Natural Science Foundation of China under Grant No 51532007;the Major Projects of Zhejiang Province under Grant No 2013C01037;the Foundation of State Key Lab of Silicon Materials
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2017年02期
  • 【分类号】TM914.41
  • 【下载频次】21
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