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High-Gain N-Face AlGaN Solar-Blind Avalanche Photodiodes Using a Heterostructure as Separate Absorption and Multiplication Regions

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【作者】 汤寅； 蔡青； 杨莲红； 董可秀； 陈敦军； 陆海； 张荣； 郑有炓；

【Author】 Yin Tang;Qing Cai;Lian-Hong Yang;Ke-Xiu Dong;Dun-Jun Chen;Hai Lu;Rong Zhang;You-Dou Zheng;Key Laboratory of Advanced Photonic and Electronic Materials, School of electronic Science and Engineering,Nanjing University;Department of Physics, Changji College;School of Mechanical and Electronic Engineering, Chuzhou University;

【机构】 Key Laboratory of Advanced Photonic and Electronic Materials, School of electronic Science and Engineering,Nanjing University； Department of Physics, Changji College； School of Mechanical and Electronic Engineering, Chuzhou University；

【摘要】 It is well known that Ⅲ-nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields. To take full advantage of the polarization electric field, we design an N-face AlGaN solar-blind avalanche photodiode（APD） with an Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure as separate absorption and multiplication（SAM） regions. The simulation results show that the N-face APDs are more beneficial to improving the avalanche gain and reducing the avalanche breakdown voltage compared with the Ga-face APDs due to the effect of the polarization electric field. Furthermore, the Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure SAM regions used in APDs instead of homogeneous Al0.45Ga0.55N SAM structure can increase significantly avalanche gain because of the increased hole ionization coefficient by using the relatively low Al-content AlGaN in the multiplication region. Meanwhile, a quarter-wave AlGaN/AIN distributed Bragg reflector structure at the bottom of the device is designed to remain a solar-blind characteristic of the heterostructure SAM-APDs.

【Abstract】 It is well known that Ⅲ-nitride semiconductors can generate the magnitude of MV/cm polarization electric field which is comparable with their ionization electric fields. To take full advantage of the polarization electric field, we design an N-face AlGaN solar-blind avalanche photodiode（APD） with an Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure as separate absorption and multiplication（SAM） regions. The simulation results show that the N-face APDs are more beneficial to improving the avalanche gain and reducing the avalanche breakdown voltage compared with the Ga-face APDs due to the effect of the polarization electric field. Furthermore, the Al0.45Ga0.55N/Al0.3Ga0.7N heterostructure SAM regions used in APDs instead of homogeneous Al0.45Ga0.55N SAM structure can increase significantly avalanche gain because of the increased hole ionization coefficient by using the relatively low Al-content AlGaN in the multiplication region. Meanwhile, a quarter-wave AlGaN/AIN distributed Bragg reflector structure at the bottom of the device is designed to remain a solar-blind characteristic of the heterostructure SAM-APDs.

【关键词】 AlGaN； multiplication； Solar； breakdown； nitride； reflector； quarter； instead； Absorption； blind；
【基金】 Supported by the State Key Project of Research and Development Plan of China under Grant No 2016YFB0400903;the National Natural Science Foundation of China under Grant Nos 61634002,61274075 and 61474060;the Key Project of Jiangsu Province under Grant No BE2016174;the Anhui University Natural Science Research Project under Grant No KJ2015A153;the Open Fund of State KeyLab of Optical Technologies on Nano-fabrication and Micro-engineering
  • 【文献出处】 Chinese Physics Letters ,中国物理快报(英文版) , 编辑部邮箱 ,2017年01期
  • 【分类号】TN312.7
  • 【被引频次】2
  • 【下载频次】35
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