Molecular Beam Epitaxy of GaSb on GaAs Substrates with Compositionally Graded LT-GaAs_xSb_1-x Buffer Layers

【摘要】 We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using compositionally graded GaAs_xSb_1-x buffer layers. Optimization of GaAs_xSb_1-x growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of GaAs_xSb_1-xlayers are found to be 420℃ and 0.5μm,respectively. The smallest full width at half maximum value and the root mean square surface roughness of 0.67 nm over 2×2μm² area are achieved as a 250 nm GaSb film is grown under optimized conditions.更多还原

【Abstract】 We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using compositionally graded GaAs_xSb_1-x buffer layers. Optimization of GaAs_xSb_1-x growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface. The optimized growth temperature and thickness of GaAs_xSb_1-xlayers are found to be 420℃ and 0.5μm,respectively. The smallest full width at half maximum value and the root mean square surface roughness of 0.67 nm over 2×2μm² area are achieved as a 250 nm GaSb film is grown under optimized conditions.更多还原