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NUMERICAL METHOD OF MIXED FINITE VOLUME-MODIFIED UPWIND FRACTIONAL STEP DIFFERENCE FOR THREE-DIMENSIONAL SEMICONDUCTOR DEVICE TRANSIENT BEHAVIOR PROBLEMS

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【作者】 袁益让杨青李长峰孙同军

【Author】 Yirang YUAN;Qing YANG;Changfeng LI;Tongjun SUN;Institute of Mathematics,Shandong University;School of Mathematical Sciences,Shandong Normal University;School of Economics,Shandong University;

【机构】 Institute of Mathematics,Shandong UniversitySchool of Mathematical Sciences,Shandong Normal UniversitySchool of Economics,Shandong University

【摘要】 Transient behavior of three-dimensional semiconductor device with heat conduction is described by a coupled mathematical system of four quasi-linear partial differential equations with initial-boundary value conditions.The electric potential is defined by an elliptic equation and it appears in the following three equations via the electric field intensity.The electron concentration and the hole concentration are determined by convection-dominated diffusion equations and the temperature is interpreted by a heat conduction equation.A mixed finite volume element approximation,keeping physical conservation law,is used to get numerical values of the electric potential and the accuracy is improved one order.Two concentrations and the heat conduction are computed by a fractional step method combined with second-order upwind differences.This method can overcome numerical oscillation,dispersion and decreases computational complexity.Then a three-dimensional problem is solved by computing three successive one-dimensional problems where the method of speedup is used and the computational work is greatly shortened.An optimal second-order error estimate in L norm is derived by using prior estimate theory and other special techniques of partial differential equations.This type of mass-conservative parallel method is important and is most valuable in numerical analysis and application of semiconductor device.

【Abstract】 Transient behavior of three-dimensional semiconductor device with heat conduction is described by a coupled mathematical system of four quasi-linear partial differential equations with initial-boundary value conditions.The electric potential is defined by an elliptic equation and it appears in the following three equations via the electric field intensity.The electron concentration and the hole concentration are determined by convection-dominated diffusion equations and the temperature is interpreted by a heat conduction equation.A mixed finite volume element approximation,keeping physical conservation law,is used to get numerical values of the electric potential and the accuracy is improved one order.Two concentrations and the heat conduction are computed by a fractional step method combined with second-order upwind differences.This method can overcome numerical oscillation,dispersion and decreases computational complexity.Then a three-dimensional problem is solved by computing three successive one-dimensional problems where the method of speedup is used and the computational work is greatly shortened.An optimal second-order error estimate in L norm is derived by using prior estimate theory and other special techniques of partial differential equations.This type of mass-conservative parallel method is important and is most valuable in numerical analysis and application of semiconductor device.

【基金】 supported by National Natural Science Foundation of China(11101244,11271231);National Tackling Key Problems Program(20050200069);Doctorate Foundation of the Ministry of Education of China(20030422047)
  • 【文献出处】 Acta Mathematica Scientia(English Series) ,数学物理学报(英文版) , 编辑部邮箱 ,2017年01期
  • 【分类号】O241.82
  • 【被引频次】2
  • 【下载频次】28
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