【摘要】 采用液封直拉法（LEC）生长了4 inch直径（100）GaSb单晶并进行了衬底晶片的加工制备。通过优化热场,可重复生长出非掺和掺Te整锭（100）单晶,单晶锭的重量为5⁸ kg,成晶率可达80%以上。4 inch（100）晶片大部分区域的位错腐蚀坑密度小500 cm^-2 ,其（004）双晶衍射峰的半峰宽为29弧秒,表明晶片衬底的完整性相当好。晶体生长过程中固液界面较为平坦,因而晶片表现出良好的横向电学均匀性。经研磨和机械化学抛光,制备出具备良好平整度和表面粗糙度的开盒即用衬底晶片。通过控制本征受主缺陷浓度和掺杂浓度,制备出具有良好近红外透光率的n型GaSb单晶衬底。更多还原

【Abstract】 Undoped and Te-doped 4 inch diameter（ 100） GaSb single crystals in 5-8 kg weight have been grown by using liquid encapsulated Czochralski（ LEC） and substrate wafer have been prepared. By optimizing the thermal field,single crystal yield as high as 80% have been achieved. Dislocation etch pit density（ EPD） of the wafer is less than 500 cm^-2 and its X-ray diffraction rocking curves has a full width at half maximum（ FWHM） around 29 arcse,indicating a high lattice perfection. The wafer has good electrical uniformity, benefiting from the flat solid-liquid interface during the single crystal growth process. Epi-ready 4 inch GaSb substrate wafer with good flatness and low surface roughness has been prepared. N type GaSb wafer with good near infrared transmittance has been prepared by controlling the native acceptor concentration and doping concentration.更多还原