【摘要】 在辐射伏特电池换能器件表面直接制备⁶³Ni辐射源的方法存在加载量少、活性低、PN结性能退化等问题。该文提出一种利用氧化铟锡（ITO）薄膜作为导电层材料实现在透明封装玻璃表面电镀⁶³Ni源的方法。根据辐射源自吸收效应理论模拟计算了⁶³Ni-Si辐射伏特电池辐射源的最佳厚度。采用磁控溅射工艺在400μm玻璃基底上制备了厚度为180nm的ITO导电薄膜,利用电化学工作站,对ITO薄膜表面进行电镀镍,对镀镍之后的薄膜材料微观形貌、薄膜厚度进行表征,并对基于该辐射源制备方法的⁶³Ni-Si辐射伏特型同位素电池电学输出性能进行理论仿真,仿真结果表明:在厚度为2μm、活度为7.25×108Bq、面积为36mm2辐射源的辐照下,辐射伏特电池理论上能够输出85.4nW输出功率。更多还原

【Abstract】 Directly preparation of a ⁶³Ni radioisotope source on the surface of a betavoltaic battery has problems such as low loadings,low activation,and functional deterioration of the PN junction.This research demonstrates the use of an indium tin oxide（ITO）membrane as a conductive layer to plate a ⁶³Ni source on the surface of a transparent glass package. Simulations of the radiation self-absorption effect give the optimal thickness of the ⁶³Ni-Si betavoltaic battery.Then,a 180 nm thick ITO conductive membrane is prepared on a 400 μm thick glass substrate via magnetron sputtering.⁶³Ni is then electroplated on the ITO membrane surface.The micro-morphology and the Ni-electroplated membrane thickness are characterized.The electrical capabilities of the ⁶³Ni-Si betavoltaic battery fabricated based on this radiation source preparation method are then simulated.The results show that irradiation of a 2μm thick,7.25 × 10⁸ Bq activity,36 mm² radiation source gives a radioisotope battery that can export 85.4nW output power.更多还原