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A 45-channel 100 GHz AWG based on Si nanowire waveguides

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【作者】 李凯丽； 张家顺； 安俊明； 李建光； 王亮亮； 王玥； 吴远大； 尹小杰； 胡雄伟；

【Author】 LI Kai-li;ZHANG Jia-shun;AN Jun-ming;LI Jian-guang;WANG Liang-liang;WANG Yue;WU Yuan-da;YIN Xiao-jie;HU Xiong-wei;State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences;College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences;

【机构】 State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences； College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences；

【摘要】 A 45-channel 100 GHz arrayed waveguide grating(AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about-23 dB. The device is fabricated on silicon-on-insulator(SOI) substrate by deep ultraviolet lithography(DUV) and inductively coupled plasma(ICP) etching technologies. The 45-channel 100 GHz AWG exhibits insertion loss of 6.5 dB and crosstalk of-8 dB.

【Abstract】 A 45-channel 100 GHz arrayed waveguide grating(AWG) based on Si nanowire waveguides is designed, simulated and fabricated. Transfer function method is used in the spectrum simulation. The simulated results show that the central wavelength and channel spacing are 1 562.1 nm and 0.8 nm, respectively, which are in accord with the designed values, and the crosstalk is about-23 dB. The device is fabricated on silicon-on-insulator(SOI) substrate by deep ultraviolet lithography(DUV) and inductively coupled plasma(ICP) etching technologies. The 45-channel 100 GHz AWG exhibits insertion loss of 6.5 dB and crosstalk of-8 dB.

【关键词】 crosstalk； waveguide； ultraviolet； lithography； spacing； inductively； grating； etching； insertion； insulator；
【基金】 supported by the National High Technology Research and Development Program of China(No.2015AA016902);the National Natural Science Foundation of China(Nos.61435013 and 61405188)
  • 【文献出处】 Optoelectronics Letters ,光电子快报(英文版) , 编辑部邮箱 ,2017年03期
  • 【分类号】TN25;TN929.1
  • 【下载频次】58
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