节点文献
功率半导体器件辐射效应综述
Review of Radiation Effects in Power Semiconductor Devices
【摘要】 功率半导体器件是航天器电源系统中的核心元件,太空环境中的粒子辐射会使其发生失效。首先,总结了硅功率半导体器件几种主要的辐射效应。然后,介绍了近年来一些新的研究成果和研究热点。最后,对第三代半导体功率器件中的辐射效应进行了简单介绍。
【Abstract】 Power semiconductor devices are key components in power system of spacecraft,which can be damaged by particles in space.The major radiation effects in silicon power semiconductors were discussed first.Then some new topic and research results in recent years were introduced.At last,the radiation effects in new type power devices and the radiation hardened techniques were summarized briefly.
【关键词】 硅功率器件;
宽禁带半导体器件;
总剂量效应;
单粒子效应;
【Key words】 Silicon power semiconductor device; Wide bandgap semiconductor device; Total ionizing dose effect; Single event effect;
【Key words】 Silicon power semiconductor device; Wide bandgap semiconductor device; Total ionizing dose effect; Single event effect;
【基金】 国家重点研发计划资助项目(2017YFB 0404100);清华大学自主科研项目(20141081190)
- 【文献出处】 微电子学 ,Microelectronics , 编辑部邮箱 ,2017年05期
- 【分类号】TN303
- 【被引频次】15
- 【下载频次】885