【摘要】 结合双/多曝光的193nm投影光刻是未来5~10年大规模集成电路工业化生产的主要方法.投影物镜作为光刻机的核心分系统,其光机系统关键技术的研究进展直接影响物镜整体性能的提升.本文分析了当前集成电路装备制造业对193nm投影物镜的需求,阐述了曝光系统设计、光学元件被动支撑、位姿调节、主动变形、元件更换和系统数值孔径调节等物镜光机系统关键技术研究现状,提炼了阻碍物镜未来发展的关键科学技术问题.目前,193nm光刻物镜尚需进一步阐明高阶热像差的产生机理和校正策略,解决多自由度位姿标定问题,形成完备的物镜研制方法,指导高成像质量物镜的制造.更多还原

【Abstract】 Combined with double/multiple exposure 193 nm immersion lithography will be the main method of industrial production of large scale integrated circuits in the next 5 to 10 years. As a core subsystem in lithography, research progress of key technologies of the projection objective opto-mechanical systems affects its performance directly. The current demand for 193 nm immersion projection objective in integrated circuit manufacturing is analyzed in the paper. Research status of objective key technologies are elaborated which including exposure system design, lens mount, lens displacement adjustment, active lens, exchangeable elements and numerical aperture(NA) regulation methods. The key scientific issues that hinder the future development of objective lenses are refined. Currently, the mechanism and correction strategy of high-order thermal aberrations need further clarify in 193 nm immersion lithography. The multi-DOF position and orientation calibration problem should be resolved. To guide the manufacture of high image quality objective lenses, an integrated research method of projection objectives should be achieved.更多还原