The arsenic doping and activations on HgCdTe( mercury cadmium telluride) p+-on-n heterojunctions grown by MBE( molecular beam epitaxy) have got a lot of attention in fabricating high performance long-wavelength IRFPAs( infrared focal plane arrays). In this paper,the performances of Hg Cd Te diodes with different arsenic doping concentrations are presented. According to the I-V results and dark current mechanism,the effect of arsenic concentration on the trap-assisted tunneling current was calculated and ana...
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