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片上太赫兹天线集成器件LT-GaAs外延转移工艺
Transfer process of LT-GaAs epitaxial films for on-chip terahertz antenna integrated device
【摘要】 提供了一种实现片上太赫兹天线集成器件光电导开关材料低温GaAs（LT-GaAs）外延层的转移工艺,使用HNO3-NH4OH-H2O-C3H8O7·H2O溶液-H2O2-HCl腐蚀体系化学湿法腐蚀分子束外延（MBE）生长的外延材料,Hall测试表明MBE生长的此外延材料电阻率在106Ω·cm量级.剥离半绝缘GaAs（SI-GaAs）衬底层与Al0.9Ga0.1As牺牲层得到1.5μm LT-GaAs与环烯烃聚合物（COP）键合的结构.原子力显微镜（AFM）、扫描电子显微镜（SEM）、高倍显微镜形貌表征表明剥离后的结构表面平整光滑,表面粗糙度（RMS）为2.28 nm,EDAX能谱仪分析显示该结构中不含Al组分,满足光刻形成光电导开关的要求.
【Abstract】 A process for LT-GaAs used as photoconductive switch in epitaxial layer transfer of on-chip THz antenna integrated device was provided. Hall indicated resistivity of the epitaxial materials gained by MBE was about 106Ω·cm. HNO3-NH4OH-H2O-C3H8O7·H2O-H2O2-HCl and wet chemical etching were used to etch epitaxial materials grown by MBE. Gained the structure that 1. 5μm LT-GaAs bounded with COP after lift-off of SI-GaAs and Al0. 9Ga0. 1As. AFM、SEMand high-power microscope indicated that the structure was flat and smooth after lift-off. RMS = 2. 28 nm. EDAX indicated therewasn’t Al in this structure. It can be used to make photoconductive switch.
【Key words】 on-chip THz antenna integrated device； LT-GaAs； epitaxial layer transfer； wet chemical etching；
- 【文献出处】 红外与毫米波学报 ,Journal of Infrared and Millimeter Waves , 编辑部邮箱 ,2017年02期
- 【分类号】TN304.23
- 【被引频次】5
- 【下载频次】183