【摘要】 近期,实验发现PN结中局域载流子具有极高提取效率,并导致吸收系数的大幅度增加.文中报道基于上述现象的新型量子阱带间跃迁红外探测器原型器件的性能.利用含有InGaAs/GaAs多量子阱的PIN二极管,在无表面减反射膜的实验条件下,利用仅100 nm的有效吸收厚度,实现了31%的外量子效率.基于该数值推算得到,量子阱的光吸收系数达3.7×10⁴cm^-1,该数值高于传统透射实验测量结果一个数量级.上述实验结果指出,利用量子阱带间跃迁工作机制,有望实现新颖的器件结构设计和提高现有器件性能.更多还原

【Abstract】 Recently,a high localized carrier extraction efficiency and increasing of absorption coefficient was observed in low-dimensional semiconductors within a PN junction.Such phenomenon provides the possibility of fabricating novel high performance quantum well interband transition detector.In this work,we report the performance of the first photon detector based on the interband transition of strained InGaAs/GaAs quantum wells.The external quantum efficiency of the device was measured to be 31%using an absorption layer with only 100nm effective thickness and without an anti-reflection layer.Using such high value of quantum efficiency,an absorption coefficient of 3.7×104cm^-1 is calculated,which is obviously larger than previously reported values.The results here demonstrate the possibility of fabricating high performance and lowcost infrared photon detectors.更多还原