【摘要】 以Zn（Ac）₂ 2H₂O和Tb₄O₇为原料,采用溶胶-凝胶、浸渍-提拉技术在单晶硅（100）衬底上制备了铽掺杂的氧化锌（ZnO∶Tb）薄膜。分别在氮气和氢气气氛下对薄膜进行退火处理,并进行了XRD、IR、EDS和AFM表征,同时结合荧光光谱测试详细研究了退火气氛对薄膜发光性质的影响。结果表明,经氮气和氢气气氛处理的薄膜中,ZnO∶Tb粒子均具有六方纤锌矿结构,且排列致密均匀,相应的ZnO∶Tb粒径分别为59和45 nm。经氮气气氛处理的ZnO薄膜,掺杂前后的发光情况变化显著,由485 nm的蓝光发射移到382 nm的紫外发射。用氢气进行退火处理时,掺杂前后薄膜的荧光光谱都由强的紫外发射和弱的蓝光发射组成,但掺杂后薄膜的紫外光发射减弱,蓝光发射增强。薄膜层数为3、Tb掺杂量为3.85 mol%时,ZnO∶Tb薄膜的荧光发射效果最佳。更多还原

【Abstract】 Tb doped zinc oxide（ ZnO∶ Tb） nano thin films were prepared on Si（100） substrates by a sol-gel method and followed by dip-coating with Zn（ Ac）₂·2H₂O and Tb₄O₇ as the raw materials. The ZnO∶ Tb films were annealed in N₂ and H₂ atmospheres respectively,and were characterized by XRD,IR,EDS and AFM,respectively. The effect of annealing atmospheres on photoluminescent properties of films was investigated by photoluminescent spectroscopy. The results indicated that ZnO ∶ Tb films annealed in N₂ or H₂ atmospheres had a hexagonal wurtzite structure and packed compactly and uniformly,in which the particle sizes were 45 and 59 nm,respectively. The photoluminescence of ZnO∶ Tb films annealed in N₂ obviously changed compared with un-doped ZnO and the emission peak shifted from blue band（485 nm） to ultraviolet band（382 nm）. The photoluminescent spectra of ZnO∶ Tb films and pure ZnO were composed of both strong ultraviolet band and weak blue band. When they were treated in H₂,the ultraviolet band decreased and the blue band increased for ZnO∶ Tb films. The photoluminescent emission of ZnO∶ Tb films performed best when the layers of thin films were three with the Tb content of 3. 85 mol%.更多还原