【摘要】 TFDC(Thomas-Fermi-Dirac-Cheng)电子理论的核心思想是"材料研究中,界面边界条件起着十分重要的作用,其边界条件是电子密度处处连续"。建立Cu/Ni相界面扩散反应的TFDC模型对于扩散连接工艺中相界面扩散反应的研究具有重要的意义。文中以Cu-Ni相界面为例,首先依据TFDC电子理论、利用其电子密度处处连续的边界条件,论述了Cu/Ni相界面扩散反应层的形成和生长,然后建立了Cu/Ni相界面扩散反应的TFDC模型。扩散反应层的形成和长大是各相层界面电子密度连续的结果,二元金属扩散反应层的研究可以借助于TFDC电子理论进行深入研究。更多还原

【Abstract】 The core idea of TFDC( Thomas-Fermi-Dirac-Cheng) electron theory is that the boundary condition of the interface plays an important role in the research of materials. The boundary condition is that the electron density is everywhere continuous. The establishment of TFDC model for Cu/Ni phase diffusion reaction has an important significance for the study of diffusion reaction in diffusion bonding process. In this paper,taking the Cu-Ni phase interface as an example,firstly,according to the TFDC electron theory and the boundary condition of the electron density is everywhere,the formation and growth of the diffusion layer of Cu/Ni is discussed. Then the diffusion and dissolution model of Cu/Ni is established. The formation and growth of the diffusion layer is the result of the continuum of the interface electron density of each phase layer. Study on the binary metal diffusion reaction layer can be carried out with the aid of TFDC( Thomas-Fermi-Dirac-Cheng) electron theory.更多还原