节点文献
GaAs光导开关损伤机理研究
GaAs PCSS’s injuring mechanism
【摘要】 光导开关(photoconductive semiconductor switches,PCSS)的损伤分为热击穿和电击穿,2种击穿的原因都由开关基底材料陷阱特性决定,因此对芯片击穿机理与开关制作工艺关系的研究非常重要。文章依据开关芯片的材料特性和半导体工艺知识,研究和分析了光导开关的击穿机理以及开关击穿可能存在的工艺问题。
【Abstract】 The injuring mechanism of photoconductive semiconductor switches(PCSS)is divided into thermal breakdown and electric breakdown.The reason of two kinds of breakdown is determined by the characteristics of the deep level trap of the switch materials.Therefore,the research on the relationship between the chip breakdown mechanism and the production process of the switch is very important.According to the material characteristics of the switch chip and the knowledge of semiconductor technology,the breakdown mechanism of PCSS and the possible problems in the process of switching breakdown are analyzed in this paper.
【Key words】 photoconductive semiconductor switches(PCSS); thermal breakdown; electric breakdown; electron trapping effect; electron transport effect;
- 【文献出处】 合肥工业大学学报(自然科学版) ,Journal of Hefei University of Technology(Natural Science) , 编辑部邮箱 ,2017年04期
- 【分类号】TN303
- 【被引频次】2
- 【下载频次】112