节点文献
4 × 25 GHz uni-traveling carrier photodiode arrays monolithic with In P-based AWG demultiplexers using the selective area growth technique
【摘要】 We use the selective area growth(SAG) technique to monolithically integrate In P-based 4-channel arrayed waveguide gratings(AWGs) with uni-traveling carrier photodiode arrays at the O-band. Two kinds of channel spacing demultiplexers of 20 nm and 800 GHz are adopted for potential 100 Gbps coarse wavelength division multiplexing and local area network wavelength division multiplexing systems, with an evanescent coupling plan to facilitate the SAG technique into device fabrication. The monolithic chips in both channel spacings exhibit uniform bandwidths over 25 GHz and a photodiode responsivity of 0.81 A/W for each channel, in agreement with the simulated quantum efficiency of 80%. Cross talk levels are below-20 d B for both channel spacing chips.
【Abstract】 We use the selective area growth(SAG) technique to monolithically integrate In P-based 4-channel arrayed waveguide gratings(AWGs) with uni-traveling carrier photodiode arrays at the O-band. Two kinds of channel spacing demultiplexers of 20 nm and 800 GHz are adopted for potential 100 Gbps coarse wavelength division multiplexing and local area network wavelength division multiplexing systems, with an evanescent coupling plan to facilitate the SAG technique into device fabrication. The monolithic chips in both channel spacings exhibit uniform bandwidths over 25 GHz and a photodiode responsivity of 0.81 A/W for each channel, in agreement with the simulated quantum efficiency of 80%. Cross talk levels are below-20 d B for both channel spacing chips.
- 【文献出处】 Chinese Optics Letters ,中国光学快报(英文版) , 编辑部邮箱 ,2017年08期
- 【分类号】TN25;TN31
- 【被引频次】3
- 【下载频次】31