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4 × 25 GHz uni-traveling carrier photodiode arrays monolithic with In P-based AWG demultiplexers using the selective area growth technique

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【作者】 叶焓韩勤吕倩倩潘盼安俊明杨晓红王玉冰刘荣瑞

【Author】 Han Ye;Qin Han;Qianqian Lv;Pan Pan;Junming An;Xiaohong Yang;Yubing Wang;Rongrui Liu;State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences;School of Electronic, Electrical and Communication Engineering, University of Chinese Academy of Sciences;College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences;

【机构】 State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of SciencesSchool of Electronic, Electrical and Communication Engineering, University of Chinese Academy of SciencesCollege of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences

【摘要】 We use the selective area growth(SAG) technique to monolithically integrate In P-based 4-channel arrayed waveguide gratings(AWGs) with uni-traveling carrier photodiode arrays at the O-band. Two kinds of channel spacing demultiplexers of 20 nm and 800 GHz are adopted for potential 100 Gbps coarse wavelength division multiplexing and local area network wavelength division multiplexing systems, with an evanescent coupling plan to facilitate the SAG technique into device fabrication. The monolithic chips in both channel spacings exhibit uniform bandwidths over 25 GHz and a photodiode responsivity of 0.81 A/W for each channel, in agreement with the simulated quantum efficiency of 80%. Cross talk levels are below-20 d B for both channel spacing chips.

【Abstract】 We use the selective area growth(SAG) technique to monolithically integrate In P-based 4-channel arrayed waveguide gratings(AWGs) with uni-traveling carrier photodiode arrays at the O-band. Two kinds of channel spacing demultiplexers of 20 nm and 800 GHz are adopted for potential 100 Gbps coarse wavelength division multiplexing and local area network wavelength division multiplexing systems, with an evanescent coupling plan to facilitate the SAG technique into device fabrication. The monolithic chips in both channel spacings exhibit uniform bandwidths over 25 GHz and a photodiode responsivity of 0.81 A/W for each channel, in agreement with the simulated quantum efficiency of 80%. Cross talk levels are below-20 d B for both channel spacing chips.

【基金】 supported by the National High-Tech Research and Development Program of China(No.2015AA016902);the National Natural Science Foundation of China(Nos.61635010,61674136,and 61435002)
  • 【文献出处】 Chinese Optics Letters ,中国光学快报(英文版) , 编辑部邮箱 ,2017年08期
  • 【分类号】TN25;TN31
  • 【被引频次】3
  • 【下载频次】31
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