【摘要】 报道了一种采用电子束直写70nm"Y"型栅工艺制备的GaAs MHEMT器件及W波段低噪声放大器。器件的最大跨导可达到1 050mS/mm,最大电流密度可达650mA/mm。通过小信号S参数测试,可外推其电流增益截至频率fT及最大振荡频率fmax分别达350GHz及470GHz。采用该工艺制备的W波段低噪声放大器,在86~96GHz频段可实现噪声系数小于3dB,增益大于20dB。更多还原

【Abstract】 GaAs metamorphic high electron mobility transistor(MHEMT)and W-band low noise amplifier prepared by 70 nm electron-beam Y-shaped gate process were reported.The GaAs MHEMT device shows an extrinsic transconductance of 1050 mS/mm and a maximum current density of 650mA/mm.A maximum current gain cutoff frequency fTof 350 GHz and a maximum oscillation frequency fmaxof 470 GHz are deduced from small-signal S-parameter measurements.The fabricated W-band low noise amplifier offers a small-signal gain more than 20 dB across a broad bandwidth of 86 to 96GHz with an associated noise figure less than 3dB.更多还原