节点文献
SiC基GaN激光划片工艺研究
Research on Stealth Dicing for GaN Device on SiC Substrate
【摘要】 介绍了一种SiC基GaN激光划片工艺。通过对划痕形貌、裂片效果、热效应和装配适应性四方面的分析,在几种氮化镓激光划片试验中优化得出高质量划切工艺,并通过小批量生产证明新工艺在良率、效率方面有一定的优势。
【Abstract】 A laser dicing process for GaN on SiC substrate was presented in this paper.In different designs of laser dicing experiment,surface morphology,chipping ratio,heat impact and assemble quality were carefully evaluated,and then an optimal singulation process was obtained.It was shown by small-batch production that the process has advantages in production yield and efficiency.
【关键词】 氮化镓高电子迁移率晶体管;
碳化硅衬底;
激光划片;
隐形切割;
划痕;
【Key words】 GaN HEMT; SiC substrate; laser dicing; stealth dicing; kerf;
【Key words】 GaN HEMT; SiC substrate; laser dicing; stealth dicing; kerf;
- 【文献出处】 固体电子学研究与进展 ,Research & Progress of SSE , 编辑部邮箱 ,2017年01期
- 【分类号】TN305
- 【被引频次】1
- 【下载频次】486