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MOCVD反应室温度均匀性的研究

Research on Heating Uniformity of MOCVD Heating Device

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【作者】 徐龙权方颂唐子涵刘新卫

【Author】 XU Long-quan;FANG Song;TANG Zi-han;LIU Xin-wei;National Institute of LED on Si Substrate,Nanchang University;School of Information Engineering,Nanchang University;

【机构】 南昌大学国家硅基LED工程技术研究中心南昌大学信息工程学院

【摘要】 为研究一种有效提高MOCVD反应室温度均匀性的方法,针对自主研发的大型立式MOCVD反应室,建立二维模型,就激励电流对反应室温度均匀性的影响进行了分析。为提高温度均匀性,通过改变不同电参数来观察磁场及石墨盘表面径向温度的变化,发现电参数与加热效率成正比,但是与加热的均匀性成反比关系;在相同功率下,电流频率上升将导致温度均匀性下降。以上关系中反映出的合理的电参数,在保证反应温度的同时,保证了温度均匀性,有利于薄膜生长。

【Abstract】 In order to improve the temperature uniform in the reaction chamber of MOCVD,the twodimensional model was established based on the vertical MOCVD reaction chamber researched by ourselves. Using the finite element method,the incentive effect of current on the reaction chamber temperature uniformity was analyzed. For purpose to improve the temperature uniformity,the change of magnetic field and graphite disk surface radial temperature were observed by changing the current intensity and frequency. It is found that the electrical parameter is proportional to the heating efficiency but inversely proportional to heating uniformity,Under the same power,the temperature uniformity decreases with the increasing of the current frequency. Reasonable electrical parameters which reflect from above,ensure both reaction temperature and temperature uniformity,is conducive to the quality of thin film growth..

【关键词】 MOCVD感应加热温度均匀性
【Key words】 MOCVDinduction heatingtemperature uniformity
【基金】 国家高技术研究发展计划(863)(2012AA041002);江西省科技厅重大科技专项(20114ABF06102)资助项目~~
  • 【文献出处】 发光学报 ,Chinese Journal of Luminescence , 编辑部邮箱 ,2017年02期
  • 【分类号】TN304.055
  • 【被引频次】9
  • 【下载频次】207
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