探讨了氧气等离子处理法对基于Zr Al O薄膜的MIM结构电容电学性能的低温工艺优化。Zr Al O薄膜用射频磁控溅射法制得,之后在不改变真空条件的情况下进行Zr Al O薄膜的氧气等离子处理。氧空位是影响薄膜电容性能的主要因素,通过改变氧气流量和等离子功率等处理条件可以影响氧空位的分布状态。通过分析受氧空位影响的电容电学性能,最终确定的等离子处理工艺可以使薄膜漏电流降低三个数量级以上,同时非线性电压系数减小约60%。
【英文摘要】
Oxygen plasma treatments were used for the low temperature improvement of electrical properties of metal-insulator-metal(MIM) structure capacitors based on Zr Al O thin films. The Zr Al O films for these capacitors were deposited by magnetron sputtering, and then treated by oxygen plasma without changing the vacuum conditions. Oxygen vacancies are considered as the main factors affecting electrical properties. Different plasma treating conditions including oxygen flow rate and plasma power result in variati...
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