【摘要】 采用化学气相沉积法（CVD）制备单层石墨烯,将其转移到300nm厚的SiO₂/Si衬底上.通过真空蒸镀法在石墨烯表面沉积Au电极,获得SiO₂/Si背栅石墨烯场效应晶体管,对其进行低温导电特性的测试.结果表明,背栅石墨烯场效应晶体管呈双极导电性,并表现出P型导电特性.室温下器件的电子迁移率为3478cm²/V.s,开关比（on/off）为1.88.在低温下器件的电子迁移率降至2913cm²/V.s,开关比上升到2.53,狄拉克点左移,P型掺杂效应减弱,温度对器件起到调制作用.更多还原

【Abstract】 We produced monolayer graphene by chemical vapor deposition（CVD）,then transferred them onto 300 nm SiO₂/Si substrate.Vacuum evaporation method is used to deposit Au electrode on the surface of graphene,to get SiO₂/Si back of gate graphene field effect transistor and text its electrical conductivity in low temperature.The results show that the device put up bipolar electrical conductivity and p-type conductive properties.Electron mobility is 3478cm²/V.s at room temperature,on/off with 1.88.Electron mobility of the device reduced to 2913cm²/V.s,on/off rising to 2.53,dirac point moved to the left,P-type doping effect was weakened,which proved the temperature have modulation effect to the device.更多还原