Fabrication and characterization of Hecharged ODS-FeCrNi films deposited by a radio-frequency plasma magnetron sputtering technique

【摘要】 He-charged oxide dispersion strengthened（ODS）FeCrNi films were prepared by a radiofrequency（RF）plasma magnetron sputtering method in a He and Ar mixed atmosphere at150℃.As a comparison,He-charged FeCrNi films were also fabricated at the same conditions through direct current（DC）plasma magnetron sputtering.The doping of He atoms and Y₂O₃ in the FeCrNi films was realized by the high backscattered rate of He ions and Y₂O₃/FeCrNi composite target sputtering method,respectively.Inductive coupled plasma（ICP）and x-ray photoelectron spectroscopy（XPS）analysis confirmed the existence of Y₂O₃ in FeCrNi films,and Y₂O₃ content hardly changed with sputtering He/Ar ratio.Cross-sectional scanning electron microscopy（SEM）shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio.Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio,while the dispersion of Y₂O₃ apparently increased the hardness of the films.Elastic recoil detection（ERD）showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts（¹7 at.%）.Compared with the minimal change of He level with depth in DC-sputtered films,the He amount decreases gradually in depth in the RF-sputtered films.The Y₂O₃-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y₂O₃ and the inhibition effect of nano-sized Y₂O₃ particles on the He element.更多还原

【Abstract】 He-charged oxide dispersion strengthened（ODS） FeCrNi films were prepared by a radiofrequency（RF） plasma magnetron sputtering method in a He and Ar mixed atmosphere at150 ℃.As a comparison,He-charged FeCrNi films were also fabricated at the same conditions through direct current（DC） plasma magnetron sputtering.The doping of He atoms and Y₂O₃ in the FeCrNi films was realized by the high backscattered rate of He ions and Y₂O₃/FeCrNi composite target sputtering method,respectively.Inductive coupled plasma（ICP） and x-ray photoelectron spectroscopy（XPS） analysis confirmed the existence of Y₂O₃ in FeCrNi films,and Y₂O₃ content hardly changed with sputtering He/Ar ratio.Cross-sectional scanning electron microscopy（SEM） shows that the FeCrNi films were composed of dense columnar nanocrystallines and the thickness of the films was obviously dependent on He/Ar ratio.Nanoindentation measurements revealed that the FeCrNi films fabricated through DC/RF plasma magnetron sputtering methods exhibited similar hardness values at each He/Ar ratio,while the dispersion of Y₂O₃ apparently increased the hardness of the films.Elastic recoil detection（ERD） showed that DC/RF magnetron sputtered FeCrNi films contained similar He amounts（¹7 at.%）.Compared with the minimal change of He level with depth in DC-sputtered films,the He amount decreases gradually in depth in the RF-sputtered films.The Y₂O₃-doped FeCrNi films were shown to exhibit much smaller amounts of He owing to the lower backscattering possibility of Y₂O₃ and the inhibition effect of nano-sized Y₂O₃ particles on the He element.更多还原