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阴极离子镀制备TiN薄膜及其光电性能的研究
Study of optical and electrical properties of TiN thin films prepared by cathodic ion sputtering
【摘要】 氮化钛(TiN)由于其独特的物理、化学、光、电和机械等性能,近年来已成为材料研究热点。本文采用阴极离子镀膜法在304不锈钢基片上制备均匀致密的TiN薄膜。采用X射线衍射、扫描电子显微镜、透射电子显微镜、扫描探针显微镜、紫外可见分光光度计、红外光谱仪等方法研究了薄膜的物相、结构以及光电特性。结果表明,薄膜主要物相为TiN,在(111)晶面具有取向性,同时薄膜中含有少量的O杂质。薄膜表面较平整,颗粒结合紧密,有部分孔洞和小尺寸突起,表面粗糙度Rq约为21.21 nm,薄膜平均厚度约为0.896μm,在红外波段的反射率可达到80%以上,红外辐射率约为0.19,椭偏结果显示TiN薄膜的消光系数k和折射率n与Ag有相似的光学特性,是一种性能优异的低辐射镀膜材料。
【Abstract】 Titanium nitride( TiN) has become a hot topic in recent years due to its unique physical,chemical,optical,electrical and mechanical properties. In the present work,a homogeneous and dense TiN thin film was deposited on 304 stainless steel substrates by using a cathodic ion sputtering method. The structure,optical and electrical properties of the thin film were studied by Xray diffraction,scanning electron microscopy,transmission electron microscopy,scanning probe microscopy,U-Vis spectrophotometer and infrared spectroscopy. The results show that the main phase of the film is TiN,which exhibits an orientation along the( 111)plane,with a small amount of O impurities. The surface roughness Rqis about 21. 21 nm,while the average thickness is about 0. 896μm. The reflectivity in the middle-far infrared band exceeds 80%,and the calculated hemisphere emittance of the film is about 0.19. The ellipsometry results show that the extinction coefficient and the refractive index of TiN is rather similar as Ag,which makes the TiN film to serve as an excellent candidate for low-emission coating materials.
【Key words】 cathodic ion sputtering; TiN thin film; low-emission; optical and electrical properties;
- 【文献出处】 燕山大学学报 ,Journal of Yanshan University , 编辑部邮箱 ,2017年04期
- 【分类号】TB383.2
- 【被引频次】3
- 【下载频次】107