【摘要】 涂层导体是发展77 K液氮温区强磁场下电力应用的实用化关键材料。由于缓冲层层数增加会导致控制生长、微观组织和界面结构的难度增大,所以简化缓冲层结构对涂层导体制备工艺的简化和成本的降低非常重要。本研究探索了低成本的化学溶液沉积（CSD）技术制备SrTiO₃（STO）缓冲层过程中前驱液热分解行为以及薄膜制备工艺路线对薄膜外延生长的影响,通过选取恰当的前驱液以及引入籽晶层沉积的方法最终获得了具有良好c轴织构且表面光滑的STO薄膜。更多还原

【Abstract】 Coated conductors are the key practical materials for developing power applications at high temperatures of 77 K and high magnetic fields. The increase of number of buffer layers would result in the increase of the degree of difficulty for controlling growth,microscopy and interface structure. Therefore,simplifying architecture of buffer layers becomes important for the simplification of preparation technics and the reduction of cost for coated conductors. In this paper,we have explored the influence of thermal decomposition and preparation technics of film on the epitaxial growth of SrTiO₃（STO） buffer layers deposited on textured NiW substrates by chemical solution deposition（CSD）. The results show that STO thin film with good c-axis texture and smooth surface could be obtained by choosing appropriate precursor solution and introducing seed layer before depositing the final oxide film.更多还原