【摘要】 本研究在单晶硅基底表面自组装制备了3-氨丙基三乙氧基硅烷(APTES)自组装薄膜,并在此基础上进行化学镀和电镀研究,最终得到了致密均匀的铜膜,镀层与单晶硅基底通过配位键连接,粘结力强。利用循环伏安(CV)法探索得到了最佳电镀工艺参数为:电流密度1.56A/dm2,电镀时间600s。借助接触角测试仪测定了不同试样表面的润湿性,通过X射线能谱仪(EDX)、扫描电子显微镜(SEM)对镀层的元素含量和表面形貌进行了表征。获得的铜镀层致密均匀并呈现金属光泽。更多还原

【Abstract】 Metallization of monocrystaline silicon could further expand its application fields.(3-aminopropyl)triethoxysilane(APTES)was used to fabricate self-assembled film on the pretreated silicon surface,and then APTES film modified substrate was treated by electroless copper plating and copper electroplating.The excellent adhesion property of copper layer is obtained which is essentially based on the formation of coordinate bond between-NH2 of APTES and copper.By cyclic voltammetry,the best copper film is obtained under the condition of copper plating timeof 600 sand current density of 1.56 A/dm2.Contact angle measurement was applied to determine the wettability of different samples.With the help of energy dispersive X-ray detector and scanning electron microscope,the element contents and morphologies of copper film were characterized.Copper film is dense and homogeneous with metallic luster.更多还原