【摘要】 以SiC陶瓷靶为靶材,Ar和CHF₃为源气体,采用反应磁控溅射法在双面抛光的316L不锈钢基片上制备出了系列Si和F共掺杂的DLC∶F∶Si薄膜。研究了射频输入功率对薄膜的附着力、硬度和表面接触角的影响。结果表明,选取适当的输入功率（180W左右）可以制备出附着力达11N的DLC∶F∶Si薄膜。通过拉曼和红外光谱分析以及样品粗糙度分析,作者提出了输入功率对DLC∶F∶Si薄膜结构和特性调制的机理,即输入功率直接影响SiC靶的溅射产额、空间Ar⁺的能量以及CHF₃的分解程度,继而影响空间Si、C、-CF、-CF₂,特别是F^*等基团的能量和浓度,调制薄膜中F含量以及Si-C键含量和C网络的关联度。Si-C、C=C键的增加有助于薄膜附着力的明显改善,F含量的减少则会导致薄膜的疏水性能有所下降。更多还原

【Abstract】 DLC films with F and Si co-doping（DLC∶F∶Si films）were deposited on 316 Lstainless steel substrates at different input powers,with radio reactive magnetron sputtering by using trifluromethane（CHF₃） and argon as source gases and SiC crystal target.The effects of RF input power on the adhesion,hardness and surface contact angle of the films were studied.Results show that DLC∶F∶Si thin films with adhesive force of 11N Newton can be prepared at an input power of about 180 W.By means of Raman and infrared spectrum measurements and sample roughness analysis,the authors put forward the mechanism of the input power modulating the structure and characteristics of DLC∶F∶Si thin films.From the mechanism study,how the RF input power directly affects the sputtering yield of SiC target,the energy of space Ar⁺and the decomposition degree of CHF₃.Also involved are the affection by the RF input power of the energy and concentration of space Si,C,-CF,-CF₂,especially F^* radicals.Therefore,the modulation of Si-C content,correlation degree of C network and F content of the films are recognized.The increase of C=C and Si-C bonds is helpful to improve the adhesion of the DLC∶F∶Si films,while the decline of F content would lead to the decrease of the hydrophobic property of the films.更多还原