【摘要】 采用脉冲激光沉积法(PLD)制备磷掺杂多晶硅薄膜,研究磷掺杂分数对多晶硅薄膜压阻性能的影响。结果表明,随着磷掺杂分数增大,多晶硅薄膜的应变系数先增大后减小。在磷掺杂分数为0.3%(质量分数)时,电阻横向应变系数的绝对值达到最大,为24.3,电阻纵向应变系数的绝对值达到最大,为12.6。横向电阻应变的非线性在1%~2.5%之间,电阻的温度系数为0.05%/℃,应变系数的温度系数为-0.06%/℃。更多还原

【Abstract】 In this paper,the polycrystalline silicon thin film was prepared on a quartz glass substrate by the PLD( pulsed laser deposition) method,and the effect of phosphorus content on piezoresistive properties of polycrystalline silicon thin film was studied. The results show that with the increase of phosphorus content,the gauge factor of polycrystalline silicon thin film showed a trend of decrease after the first increase. When the phosphorus doping fraction was 0. 3 wt%,the maximum gauge factors of longitudinal and transverse were 12. 6 and 24. 3.The nonlinearity of transverse was 1%—2. 5%,the temperature coefficient of resistance and the temperature coefficient of gauge factor were0. 05%/℃ and-0. 06%/℃.更多还原