【摘要】 使用等离子注入技术对SnO₂薄膜进行N离子注入改性,进行方块电阻、光学透过、表面形貌、Kelvin探针和X射线光电子能谱（XPS）表征,并将其作为缓冲层应用到CdTe太阳电池中。研究结果发现,对于30nm厚的SnO₂缓冲层,经过30s、10min不同时间N离子注入以后,其300⁸00nm波长范围透过率有所降低,而体电阻率则明显增加,特别是N离子注入10min的SnO₂缓冲层,表面出现很多凹孔,呈蜂窝状结构,且对后续沉积的CdS层表面形貌产生了明显影响。Kelvin探针表征结果显示,随着N离子注入时间的延长,SnO₂缓冲层功函数逐渐增加,最高达到约5.075eV,比本征SnO₂缓冲层的功函数高出0.15eV。XPS测试结果显示,N离子注入10min后,SnO₂缓冲层N1s结合能峰位向低结合能方向发生了明显移动,而O1s结合能峰位则向高结合能方向移动了,且表面区非晶格氧所占比例增大。对比电池结果,有N离子注入改性SnO₂缓冲层的电池与无缓冲层的电池相比,效率从10%左右增加到12%以上,最高达到12.47%,其中开路电压提高最为显著,从约750mV提高到790mV以上,提升了约5%,电池的整体均匀性也明显改善。更多还原

【Abstract】 SnO₂ thin films with thickness about 30 nm were prepared by RF magnetron sputtering and implanted with N ions by ion implantation technique,which were applied in CdTe solar cells as buffer layers.The results show that after N ions implantation,transmittance of SnO₂ buffer layer is around 1—3 percentage points lower than FTO in 300—800nm range,but sheet resistance is obviously increased,especially for sample with 10 min N ions implantation,of which surface morphology is cellular and shows many hollows,and the surface morphology of CdS layers has also changed.The results of Kelvin probe show that work function of SnO₂ buffer layers increase with implantation time of N ions,whose maximum value is 5.075 eV and is 0.15 eV larger than intrinsic SnO₂ buffer layer.The results of X-ray photoelectron spectroscopy show that after 10 min N ions implantation,the bind energy of N1 sbecome lower than intrinsic SnO₂ buffer layer,but both the bind enegy of O1 sand the concentration of oxygen in non-stoichiometric oxides in the surface region are increased.The results of CdTe solar cells show that efficiency increases from 10.76%to 12.47%after N ions implantation,open circuit voltage increases from about 750 mV to above 790 mV,and the uniformity is also improved.更多还原