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SnO2掺杂对BMN陶瓷结构及介电性能的影响
Effect of SnO2 Doping on the Structure and Dielectric Properties of BMN Ceramics
【摘要】 采用固相烧结法制备Ba(Mg1/3Nb2/3)O3+x(x=08)%SnO2(BMSN,x为质量分数)微波介质陶瓷,并研究SnO2掺杂对Ba(Mg1/3Nb2/3)O3(BMN)微波介质陶瓷结构及介电性能的影响。XRD分析表明,陶瓷体系中存在两种相,主晶相Ba(Mg1/3-Nb2/3)O3和附加相Ba5Nb4O15。随着x的增大,BMSN陶瓷体系的相结构逐渐由钙钛矿六方结构转变为立方结构,同时有序相逐渐由1∶2有序结构转变为1∶1有序结构。研究表明:添加适量的SnO2可以促进液相烧结,当SnO2掺杂质量分数为6%时,BMN陶瓷致密化烧结温度由纯相时的1 550℃以上降低至1 200℃,表观密度ρ=6.39g/cm3,相对理论密度为99.1%,此时BMSN陶瓷体系拥有优良的微波介电性能——高相对介电常数(εr=33.6),接近于零的谐振频率温度系数(τf=0.15×10-6℃-1),高品质因数与谐振频率的乘积(Q·f=112 300GHz(8GHz))。
【Abstract】 The structure and microwave dielectric properties of Ba(Mg1/3Nb2/3)O3(BMN)ceramics doped with x(x=0-8)wt% SnO2(BMSN)were investigated by the solid-state reaction technique.XRD analysis suggested there were two phases:main crystalline phase Ba(Mg1/3Nb2/3)O3 and secondary phase Ba5Nb4O15.As xvalue increased,the crystal structure changed from perovskite hexagonal structure to cubic structure and the ordered phase changed from 1∶2 ordered structure to 1∶1 ordered structure.It was found that the liquid phase sintering can be promoted greatly by adding an appropriate amount of SnO2.When 6wt% SnO2 was added,the BMN ceramic showed a lower sintering temperature(1 550℃)compared to pure BMN(1 200℃),an apparent densityρof 6.39g/cm3,a relative theoretical density of 99.1%,also excellent microwave dielectric properties:high relative dielectric constant(εr= 33.6),near-zero temperature coefficient of resonant frequency valueτf=0.15×10-6℃-1,high quality factor plus resonant frequency(Q·f=112 300GHz(8GHz)).
【Key words】 microwave dielectric ceramic; doping; crystal structure; dielectric property;
- 【文献出处】 材料导报 ,Materials Review , 编辑部邮箱 ,2017年12期
- 【分类号】TQ174.1
- 【被引频次】1
- 【下载频次】175