【摘要】 氮化铝(Al N)是一种宽禁带深紫外半导体材料,其良好的性能可作为紫外固态光源。采用射频磁控溅射法,在p型Si(100)衬底上制备了Al N薄膜。通过X射线衍射分析(XRD)、紫外-可见光光谱(UV-Vis)、场发射测试对制备的Al N薄膜进行了测试分析,针对薄膜生长特性对光吸收的影响及其场发射性能进行了研究。结果显示:在Si衬底上成功的制备了高度(002)取向的Al N薄膜,薄膜在230~250nm间有强紫外吸收,阈值电场为6.39V/μm。场发射测试结果表明,磁控溅射法制备的Al N薄膜具备良好的场发射性。更多还原

【Abstract】 Al N is a wide band gap deep ultraviolet semiconductor material,its good performance can be used as a solid-state ultraviolet light source. Al N thin films were deposited on Si(100) substrate by RF magnetron sputtering. The sample was characterized by means of X ray diffraction(XRD),ultraviolet visible spectroscopy(UV-Vis) and field emission test,the effect of growth characteristics on the absorption of light and its field emission properties were investigated. The results show that a high(002) Al N films were successfully deposited on the Si substrate,it has strong absorption at 230~250nm and the threshold electric field is 6.39V/μm. The field emission test results show that the prepared Al N films have good field emission properties.更多还原