【摘要】 基于TSMC 90nm CMOS工艺,设计实现K波段片上集成CMOS接收前端.接收前端由两级差分共源共栅结构低噪声放大器、双平衡吉尔伯特单元结构下变频混频器组成.射频输入、本振输入以及模块间采用片上巴伦进行匹配.测试结果表明,在射频输入频率23.2GHz时,转换增益为27.6dB,噪声系数为3.8dB,端口隔离性能良好,在电源电压为1.2V下,功耗为35mW,芯片面积为1.45×0.60mm~2.更多还原

【Abstract】 The Si-base technology can help SOC(system-on-chip)to achieve smaller size,lower cost and low power consumption.In this paper,a fully integrated K-band CMOS receiver frontend was designed based on TSMC 90 nm CMOS technology.The receiver front-end consisted of a 2-stage differential cascode low noise amplifier(LNA)and a double balanced Gilbert cell downconversion mixer.The RF input,LO input and between the LNA and mixer were matched with on-chip transformer Balun.Measurement results show that,when RF is at 23.2 GHz,the conversion gain can reach 27.6dB,the noise figure just is 3.8dB,and a high isolation can be got.The receiver chip consumes 35 mW with a 1.2Vpower supply,and only occupies a chip area of1.45×0.60mm~2.更多还原